D1.2

Towards ultralow-noise cryogenic InP high electron mobility transistors: investigation of physical origins of microwave noise

Bekari Gabritchidze, Kieran Cleary, Austin Minnich, Caltech, United States

Session:
D1: Cryogenic RF circuits Lecture

Track:
Special Sessions

Location:
Room 200

Presentation Time:
Wed, 10 Jan, 08:40 - 09:00 MST (UTC -7)

Session Co-Chairs:
Akim Babenko, Jet Propulsion Laboratory and Leonardo Ranzani, Raytheon BBN
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