TU2.R8.1

Write Voltage Optimization to Increase Flash Lifetime in a Two-Variance Gaussian Channel

Ava Asmani, Semira Galijasevic, Richard Wesel, University of California, Los Angeles, United States
Session:
Coding and Access for Memory
Track:
13: Coding for Computation and Storage
Location:
Omega
Presentation Time:
Tue, 9 Jul, 11:30 - 11:50
Session Chair:
Ron Roth, Technion
Presentation
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Discussion
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Session TU2.R8
TU2.R8.1: Write Voltage Optimization to Increase Flash Lifetime in a Two-Variance Gaussian Channel
Ava Asmani, Semira Galijasevic, Richard Wesel, University of California, Los Angeles, United States
TU2.R8.2: Fast Readable Multi-Cell Coding for Flash Memory
Hironori Uchikawa, Noboru Shibata, Taira Shibuya, Kioxia Corporation, Japan
TU2.R8.3: Efficient and Timely Memory Access
Vishakha Ramani, Ivan Seskar, Roy Yates, Rutgers University, United States
TU2.R8.4: On-access error correction in certain types of content-addressable memories
Ron M Roth, Technion, Israel; Giacomo Pedretti, Hewlett Packard Enterprise, United States
Resources
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